Metal–oxide–semiconductor field-effect-transistor with a vacuum channel. Vacuum nanotransistors: back to the future? Gate insulated nanoscale vacuum transistor. Reexamination of some spintronic field-effect device concepts. Highly sensitive wavelength-scale amorphous hybrid plasmonic detectors. Two-dimensional materials and their prospects in transistor electronics. Graphene transistors: status, prospects and problems. Carbon nanotube complementay wrap-gate transistors. Carbon nanotube circuit integration up to sub-20 nm channel lengths. A mini review of neuromorphic architectures and implementations. Synaptic electronics: materials, devices and applications. Nanoscale memristor device as synapse in neuromorphic systems. The silicon carbide vacuum devices are also compared to identically sized silicon vacuum channel transistors, which reveals that the silicon carbide devices offer superior long-term stability. Our devices have a vertical surround-gate configuration and we show that their drive current scales linearly with the number of emitters on the source pad. Here, we show that nanoscale vacuum channel transistors can be fabricated on 150 mm silicon carbide wafers. However, to be a plausible alternative to solid-state electronics, nanoscale vacuum channel devices need to be fabricated on the wafer scale using established integrated circuit manufacturing techniques. They are also stable in harsh environments such as radiation and high temperature. Vacuum channel devices, however, offer inherently faster operation and better noise immunity due to the nature of their channel. Vacuum tubes were central to the early development of electronics, but were replaced, decades ago, by semiconductor transistors.
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